【IC Design】Continue Moores Law, new semiconductor research and development to achieve new breakthroughs

Source: Global Semiconductor Watch Collation       2022-06-07 13:49:41

Earlier, there were media reports that two-dimensional semiconductors, in both horizontal and vertical dimensions, offer possible technological directions for continuing Moores Law. Recently, Chinese and South Korean research teams have made new progress in the development of two-dimensional semiconductors.

According to media reports, an army of nanyang technological university, Beijing university, tsinghua university and Beijing institute of quantum information science researchers recently unveiled successfully will be single crystal in the van der Waals force titration strontium a high K perovskite oxide) and two-dimensional semiconductor integrated, this approach can open new possibilities of developing new type of transistor and electronic components.

Crystal titration of strontium, a perovskite oxide, has previously been found to be nearly impossible to combine with materials with different atomic structures. But the teams intelligent approach managed to circumvent this limitation, allowing for an almost unlimited combination of materials.

The researchers say the transistors they created can be used to make high-performance and low-power cmos inverter circuits. In the future, their devices could be mass-manufactured and used to develop low-power logic circuits and microchips.

It is worth mentioning that in addition to new breakthroughs in 2D semiconductor projects involving many domestic universities, South Korea has also ushered in new progress in the field of development.

The Korea Institute of Science and Technology (KIST) announced today that a joint research team led by Dr. Do Kyung Hwang of the Center for Optoelectronic Materials and Devices and Professor Kimoon Lee of the Department of Physics has successfully realized electronic and logic devices based on two-dimensional semiconductors by developing a novel ultra-thin electrode material (CL-SNSE2). Its electrical properties can be controlled freely.

This study overcomes the difficulty of complementary logic circuits (only n-type or P-type devices) that can be made possible by conventional two-dimensional semiconductor devices under the phenomenon of Fermi-level pinning. Using this new electrode material, a single device can perform the functions of both N-type and P-type devices, resulting in a logic circuit with high performance, low power consumption and complementary logic.

Dr Do Kyung Hwang predicts that the new two-dimensional electrode materials are very thin, have high light transmittance and are flexible, so they could be used in the next generation of flexible transparent semiconductor devices. This development will help accelerate the commercialization of next-generation systems technologies such as artificial intelligence systems.